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          NXP Semiconductors BAS86 Schottky barrier single diode BAS86 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 25 July 2012 2 / 9 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode[1] 2 A anode k a LLDS; MiniMelf (SOD80C) aaa-003679 K A [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Package Type number Name Description Version BAS86 LLDS; MiniMelf hermetically sealed glass surface-mounted package; 2 connectors SOD80C 4. Marking Table 4. Marking codes Type number Marking code BAS86 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 50 V IF forward current - 200 mA IF(AV) average forward current [1] - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 500 mA IFSM non-repetitive peak forward current tp = 10 ms; T j(init) = 25 °C - 5 A Tj junction temperature - 125 °C Tamb ambient temperature -65 125 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. |